PART |
Description |
Maker |
TPC8203 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
TPC8303 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII) TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
TPCP8301 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS? TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSコ)
|
Toshiba Semiconductor
|
2SK184 |
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
|
Toshiba Semiconductor
|
2SK3762 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
TPCA8A04-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
HN1K06FU |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
SSM3J134TU-14 |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
|
Toshiba Semiconductor
|
TPC8114 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV)
|
Toshiba Semiconductor
|
SSM3J130TU-14 |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
|
Toshiba Semiconductor
|
TPC8102 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)
|
TOSHIBA[Toshiba Semiconductor]
|
2SK3130 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ヰ-MOSV)
|
TOSHIBA[Toshiba Semiconductor]
|